Course syllabus for Semiconductor devices for modern electronics

Course syllabus adopted 2024-02-09 by Head of Programme (or corresponding).

Overview

  • Swedish nameHalvledarkomponenter för modern elektronik
  • CodeMCC190
  • Credits7.5 Credits
  • OwnerMPWPS
  • Education cycleSecond-cycle
  • Main field of studyElectrical Engineering, Engineering Physics
  • DepartmentMICROTECHNOLOGY AND NANOSCIENCE
  • GradingTH - Pass with distinction (5), Pass with credit (4), Pass (3), Fail

Course round 1

  • Teaching language English
  • Application code 29123
  • Maximum participants30 (at least 10% of the seats are reserved for exchange students)
  • Minimum participants5
  • Block schedule
  • Open for exchange studentsYes

Credit distribution

0122 Laboratory 1.5 c
Grading: UG		1.5 c
0222 Project 1.5 c
Grading: UG		1.5 c
0322 Examination 4.5 c
Grading: TH		4.5 c
  • 31 Okt 2024 am J
  • 09 Jan 2025 pm J
  • 26 Aug 2025 pm J

In programmes

Examiner

Go to coursepage (Opens in new tab)

Eligibility

General entry requirements for Master's level (second cycle)
Applicants enrolled in a programme at Chalmers where the course is included in the study programme are exempted from fulfilling the requirements above.

Specific entry requirements

English 6 (or by other approved means with the equivalent proficiency level)
Applicants enrolled in a programme at Chalmers where the course is included in the study programme are exempted from fulfilling the requirements above.

Course specific prerequisites

Knowledge in electromagnetic wave theory, solid-state physics, circuit theory and microelectronics. Examples of courses at Chalmers that together contain recommended prior knowledge are: Microelectronics (MCC087); Solid State Physics (FFY012 or TIF400).

Aim

After course completion, the participants will understand the fundamental principles and challenges of modern microelectronics and high-frequency devices. Participants will learn how to analyse semiconductor devices, explain physical phenomena, evaluate device models, and design high-speed transistors and diodes. Moreover, we will discuss the research frontier and trends of nanoelectronics. Finally, the goal is to allow participants to verify and evaluate device models experimentally.

Learning outcomes (after completion of the course the student should be able to)

  1. Analyse physical properties of semiconductor materials (carrier concentration and transport, carrier generation and recombination, heterojunctions);
  2. Analyse models for basic device building blocks such as pn-junctions, metal-semiconductor, contacts and metal-insulator-semiconductor capacitors;
  3. Analyse and model the current-voltage characteristics of field-effect transistors;
  4. Analyse the high-frequency performance and power limitations of semiconductor devices;
  5. Explain the basic principles of special microwave devices (Gunn diodes, tunnel diodes);
  6. Design field-effect transistors and diodes for a specific application;
  7. Plan and perform basic measurements on high-frequency semiconductor devices;
  8. Evaluate and illustrate the consistency between the model and measurements of devices;
  9. To colleagues, describe and communicate current state-of-the-art challenges of nanoelectronics and modern high-frequency devices (e.g. FinFET, 2D material devices, nanowire FETs, HEMTs, RTDs).

Content

A. Lectures and tutorials

The course spans from the analysis of basic device building blocks to the design of modern semiconductor devices. Topics: semiconductor materials and their properties, carrier concentration and transport, carrier recombination and generation, heterojunctions, pn-junction, metal-semiconductor junctions, metal-isolator-semiconductor junctions, Schottky diodes, MESFETs, MOSFETs, HEMTs, two-dimensional materials, tunnel devices, Gunn diode, resonant tunnelling diodes (RTDs), cut-off frequency, transit time and maximum frequency of oscillation, and finally device measurement techniques.

B. Laboratory work

The laboratory work involves characterising two types of semiconductor devices, including high-frequency characterisation techniques. The consistency between the model and measurements of devices should be evaluated and summarised in a short report.

C. Project

Project work on a topic related to nanoelectronics and device physics. Each person will choose physical phenomena or a semiconductor device they are interested in and write an essay as a 4-page IEEE article. Finally, you should hold an interesting and course-relevant presentation of the project.

Organisation

Weekly lectures and tutorials constitute the backbone of this course. The laboratory work will start a couple of weeks into the study period, and the projects will be presented at the end of the course. A detailed schedule will be posted on the course home page.

Literature

Jesús A. del Alamo, ”Integrated Microelectronic Devices: Physics and Modeling”, Pearson, (ISBN-13: 9780134670904).

Scientific and technical papers.

Examination including compulsory elements

Passed written examination (open book), laboratory work, and project (essay) completion. The final grade is determined by the written examination.

The course examiner may assess individual students in other ways than what is stated above if there are special reasons for doing so, for example if a student has a decision from Chalmers on educational support due to disability.