Course syllabus for Semiconductor materials physics

Course syllabus adopted 2024-01-31 by Head of Programme (or corresponding).

Overview

  • Swedish nameHalvledarfysik - material och heterostrukturer
  • CodeFMI040
  • Credits7.5 Credits
  • OwnerMPNAT
  • Education cycleSecond-cycle
  • Main field of studyEngineering Physics
  • DepartmentMICROTECHNOLOGY AND NANOSCIENCE
  • GradingTH - Pass with distinction (5), Pass with credit (4), Pass (3), Fail

Course round 1

  • Teaching language English
  • Application code 18127
  • Maximum participants30 (at least 10% of the seats are reserved for exchange students)
  • Block schedule
  • Open for exchange studentsYes

Credit distribution

0102 Examination 7.5 c
Grading: TH
7.5 c
  • 05 Jun 2025 am J
  • 12 Okt 2024 am J
  • 22 Aug 2025 pm J

In programmes

Examiner

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Eligibility

General entry requirements for Master's level (second cycle)
Applicants enrolled in a programme at Chalmers where the course is included in the study programme are exempted from fulfilling the requirements above.

Specific entry requirements

English 6 (or by other approved means with the equivalent proficiency level)
Applicants enrolled in a programme at Chalmers where the course is included in the study programme are exempted from fulfilling the requirements above.

Course specific prerequisites

Basic course in solid state physics

Aim

The aim of the course is both to give a broad overview of the semiconductor materials field, and an understanding of the physics of semiconductor materials as well as the properties of different types of hetero- and quantum-structures. Also, the fabrication (synthetization) and characterization of semiconductors and quantum-structures, is treated.

Learning outcomes (after completion of the course the student should be able to)

- Know about semiconductor materials, important discoveries, and their impact on our society.


- Acquire basic information about electronic structures and classification of different materials such as metals, semimetals, graphene, semiconductors, insulators, topological Insulators.


- Describe how the electron energy dispersion affects the electron mass, mobility and electronic transport.


- Understand how the defects and dopants affect the electronic properties of semiconductors.


- Understand and interpret band diagrams of semiconductor heterostructures.


- Understand the principles of quantum mechanical effects in semiconductor nanostructures.


- Describe methods for single crystal growth and epitaxy of semiconductor materials.


- Information about the discovery and physics of 2D materials such as graphene, h-BN, MoS2, topological insulators and their heterostructures.


- Understand and describe the charge and spin polarized electronic transport in semiconductors and novel 2D materials.

Content

Introduction: general course information, historical background, semiconductors today, future materials and novel phenomena.


Electron structure: Semiconductor crystal structure, electronic energy band structure, materials classification such as metals, semi-metals, graphene, semiconductors, insulators, topological insulators.


Electron transport: Charge transport in semiconductors, electronic effect of impurities, charge carrier scattering, diffusive and ballistic transport.


Semiconductor surfaces, interfaces and heterostructures: metal-semiconductor Schottky contacts, semiconductor-semiconductor junctions, semiconductor-insulator interfaces.


Semiconductor growth and nanofabrication technology and applications: Crystal growth, epitaxial growth, nanofabrication, electronic and optoelectronic devices.


Semiconductor quantum structures: Quantum-wells, -wires and -dots; Electronic and optical properties in quantum structures.


Quantum device physics in semiconductors: Coulomb blockade, quantum point contacts, weak localization, Aharonov-Bohm effect, Shubnikov de Haas oscillations and Quantum Hall effects.


Novel two-dimensional (2D) materials: Electronic and quantum properties of 2D materials such as - graphene, hexagonal boron nitride (h-BN), MoS2 and their heterostructures.


Spin polarized electron transport in semiconductors: Introduction to spintronics, spin scattering and relaxation processes in semiconductors, spin transport and dynamics in semiconductors.


Spin polarized electron transport in 2D materials heterostructures: Spin transport in graphene, spin polarized tunneling through h-BN, spin and valley polarization in MoS2.


Topological insulators: Electronic band structure of topological insulators, spin polarized current in topological insulators.

Organisation

  • Lectures.
  • Three compulsory home assignments.
  • Two compulsory lab exercises.
  • One compulsory project assignment.

Literature

  1. Semiconductor physics and devices, Donald Neamen
  2. Spintronics: Fundamentals and applications
    Igor Zutić, Jaroslav Fabian, and S. Das Sarma
    Rev. Mod. Phys. 76, 323 (2004).
  3. Lecture notes and literature on 2D materials, Topological insulators and Spintronics

Examination including compulsory elements

Written exam. Grading according to: U (Fail), 3, 4, 5.

The course examiner may assess individual students in other ways than what is stated above if there are special reasons for doing so, for example if a student has a decision from Chalmers on educational support due to disability.